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| Transys Electronics LIMITED TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR (NPN) TO-220 1. BASE 2. COLLECTOR FEATURES Power dissipation PCM: 1.75 W (Tamb=25) 3. EMITTER Collector current 3 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VBE VCE=2V, IC=0.1A IC=2A, IB=200mA VCE=2V, IC=1A VCE=5V, IC=500mA VCB=10V, IE=0,f=1MHz 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=100A, IE=0 Ic=1mA, IB=0 IE=100A, IC=0 VCB=60V, IE=0 VCE=60V, IE=0 VEB=4V, IC=0 VCE=2V, IC=1A 60 60 5 100 1 100 40 40 1 1.5 8 65 320 A mA A V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range C 40-80 D 60-120 E 100-200 F 160-320 |
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